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| Variable Capacitance Diodes MA111 MA367 Silicon epitaxial planer type For UHF and VHF electronic tuner AFC INDICATES CATHODE Unit : mm s Features q q q 0.40.15 1 2 Small series resistance rD matic insertion through taping 0.40.15 1.70.1 2.50.2 0.3 -0.05 0.16 -0.06 +0.1 S-Mini package, enabling down-sizing of the equipment and auto- Parameter Reverse voltage (DC) Peak reverse voltage Junction temperature Storage temperature * RL =10k Symbol VR VRM Tj Tstg Rating 30 34 150 - 55 to +150 Unit V V C C 0 to 0.05 s Absolute Maximum Ratings (Ta= 25C) 0.90.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol : 6K s Electrical Characteristics (Ta= 25C) Parameter Reverse current (DC) Diode capacitance Capacitance ratio Series resistance Symbol IR CD(2V) CD(10V) CD(2V)/CD(10V) rD * CD= 9pF, f= 470MHz VR= 30V VR= 2V, f= 1MHz VR= 10V, f= 1MHz 10.5 3.3 2.8 Condition min typ max 10 16.0 5.7 3.4 1.6 Unit nA pF pF -- Note 1. Rated input/output frequency : 470MHz 2. * rD measurement device : YHP MODEL 4191A RF IMPEDANCE ANALYZER s Marking 6K +0.1 1.250.1 Large capacity variation ratio Variable Capacitance Diodes MA367 CD - VR 100 f=1MHz Ta=25C 120 IF - VF 1.03 CD - Ta f=1MHz 50 CD (pF) 100 1.02 VR=2V IF (mA) 30 20 80 25C -40C CD (Ta) CD (Ta=25C) 1.01 Ta=60C 60 10V Diode capacitance 10 Forward current 1.00 5 3 2 40 0.99 20 0.98 1 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 0.97 0 20 40 60 Ta 80 (C) 100 Ambient temperature IR - Ta 100 VR=30V Reverse current IR (nA) 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ta (C) Ambient temperature CD rank classification AFC variable capacitance gap classification table B rank 16 15 CD2V/CD10V=3.4 (pF) (2V) 14 13 12 11 10 CD2V/CD10V=2.8 CD 3.0 3.5 4.0 CD 4.5 (10V) 5.0 5.5 (pF) |
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